Hierarchical common source line structure in nand flash memory

ABSTRACT

Each memory cell string in a generic NAND flash cell block connects to a Common Source Line (CLS). A value for applying to the CSL is centrally generated and distributed to a local switch logic unit corresponding to each NAND flash cell block. For source-line page programming, the distribution line may be called a Global Common Source Line (GCSL). In an array of NAND flash cell blocks, only one NAND flash cell block is selected at a time for programming. To reduce power consumption, only the selected NAND flash cell block receives a value on the CSL that is indicative of the value on the GCSL. Additionally, the CSLs of non-selected NAND flash cell blocks may be disabled through an active connection to ground.

RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 12/337,008, filed Dec. 17, 2008, which application claimspriority from U.S. provisional Patent Application No. 61/015,909, filedDec. 21, 2007. Both referenced applications are incorporated herein byreference in their entirety.

FIELD OF THE INVENTION

The present application relates generally to NAND flash memory and, morespecifically, to a Hierarchical Common Source Line Structure for suchmemory.

BACKGROUND OF THE INVENTION

NAND flash memory has been proposed as a main storage element to replacehard disk drives, which have been used for a long time in the PersonalComputer (PC) systems and servers. NAND flash memory uses “tunnelinjection” for writing and “tunnel release” for erasing. Such writingand erasing makes use of a quantum tunneling effect, also calledFowler-Nordheim tunnel injection, wherein charge carriers are injectedinto an electric conductor through a thin layer of an electric insulator(a gate oxide).

Recent expansion in the use of NAND flash memory in the semiconductormemory system may be, at least in part, attributed to a relatively lowpower consumption feature that makes NAND flash memory particularlysuitable for mobile products.

NAND flash memory is arranged as strings of flash memory cells.Associated with each NAND memory cell string is a bit line. Runningacross the NAND memory cell strings are word lines. Accordingly, throughselection of, i.e., application of an appropriate voltage on, aparticular bit line and a particular word line, a particular flashmemory cell may be selected for writing.

When programming a flash memory cell, a program voltage is applied to acontrol gate of the flash memory cell and the bit line, associated withthe NAND memory cell string that includes the flash memory cell, isgrounded. Electrons from a p-well are injected into a floating gate ofthe flash memory cell. When electrons accumulate in the floating gate,the floating gate becomes negatively charged and the threshold voltageof the flash memory cell is raised. To apply the program voltage to thecontrol gate of the flash memory cell being programmed, that programvoltage is applied on the appropriate word line. The word line is alsoconnected to a control gate of one flash memory cell in each of theother NAND memory cell strings that utilize the same word line. Aproblem arises when it is desired to program one flash memory cell on aword line without programming the other flash memory cells connected tothe same word line. Because the program voltage is applied to thecontrol gate of all flash memory cells connected to a word line, anunselected flash memory cell (a flash memory cell that is not to beprogrammed) on the word line, especially a flash memory cell adjacent tothe flash memory cell selected for programming, may become inadvertentlyprogrammed. The unintentional programming of the unselected flash memorycell on the selected word line is referred to as “program disturb”.

Several techniques can be employed to prevent program disturb. In onemethod, known as “self boosting”, the bit lines that are not selectedare electrically isolated and a pass voltage (e.g., 10 volts) is appliedto the word lines that are not selected during programming. Theunselected word lines couple to the unselected bit lines, causing avoltage (e.g., eight volts) to exist in the channel of the unselectedbit lines, thereby tending to reduce program disturb. Self boostingcauses a voltage boost to exist in the channel. The voltage boost tendsto lower the voltage across the tunnel oxide and reduce program disturb.

Recent improvements in process technology have allowed for smallertransistors and a reduction in the main supply voltage (V_(DD)) level.Such a reduction in V_(DD) level acts to prevent transistor destructiondue to the high electrical stress for the thin gate oxide tunnelingoperation.

However, the reduction in V_(DD) level has reduced the usefulness of theself-boosting programming method described above wherein unselected bitlines are electrically isolated. To prevent program disturb in thechannel of the flash memory cell connected to the word line to which aprogram high voltage (V_(pgm)) has been applied, an associated programinhibit bit line voltage (at least V_(DD)) should be held as high aspossible.

BRIEF DESCRIPTION OF THE DRAWINGS

Further features and advantages of the embodiments will become apparentfrom the following detailed description, taken in combination with theappended drawings, in which:

FIG. 1 illustrates a pair of NAND memory cell strings;

FIG. 2 is a block diagram of a hierarchical common source-line structureincluding a plurality of NAND flash cell blocks according to anembodiment, each NAND flash cell block is associated with a local switchlogic unit and a combined row decoder and word line driver;

FIG. 3 is a block diagram of a single NAND flash cell block from FIG. 2with associated local switch logic unit and combined row decoder andword line driver;

FIG. 4 is a block diagram of the combined row decoder and word linedriver of FIG. 3 including a row decoder, a local charge pump and a wordline driver;

FIG. 5A is a schematic diagram of the row decoder of FIG. 4;

FIG. 5B is a timing diagram of the row decoder of FIG. 4;

FIG. 6 is a schematic diagram of the local charge pump of FIG. 4;

FIG. 7 is a schematic diagram of the word line driver of FIG. 4;

FIG. 8 is a block diagram of the local switch logic unit of FIG. 3;

FIG. 9 illustrates elements of the NAND flash cell block of FIG. 3; and

FIG. 10 is a timing diagram for the NAND flash cell block withassociated local switch logic unit and combined row decoder and wordline driver of FIG. 3.

DETAILED DESCRIPTION OF THE EMBODIMENTS

In order to resolve the problem of a desired high V_(CC) in the lowpower and low voltage operations of NAND flash memory, “A Source-LineProgramming Scheme For Low-Voltage Operation NAND Flash Memories”,Journal of Solid State Circuits, Vol. 35 No. 5, May 2000, has beenintroduced by Ken Takeuchi et al. (hereinafter “Takeuchi”).

The program disturb time shown in FIG. 5 of Takeuchi is defined as whenthe V_(th) is shifted by 1.5V. The selected cell programming is done by0V bit line and then it is programmed to have high V_(th) value asprogrammed state (logically, “0”). Therefore, the self-boosting level ofthe unselected cell transistor channel is very important to suppress theprogram disturb by the identical word line connection which have thehigh program voltage (see FIG. 2 of Takeuchi). However, Takeuchi didn'tprovide for a higher self-boosting level in the unselected celltransistor channel.

In U.S. application Ser. No. 11/026,825, “Source Side AsymmetricalPrecharge Programming Scheme”, filed Feb. 6, 2008 by the presentapplicant, the present inventors presented a method of programming aNAND memory cell string so as to reduce program disturb and V_(pass)disturb. The contents of U.S. application Ser. No. 11/026,825 are herebyincorporated herein by reference.

The method includes asymmetrically pre-charging a NAND string from apositively biased source line while the bit line is decoupled from theNAND string, followed by the application of a programming voltage to theselected memory cell and then followed by the application of bit linedata. After asymmetric pre-charging and application of the programmingvoltage, all the selected memory cells will be set to a program inhibitstate as they will be decoupled from the other memory cells in theirrespective NAND strings and their channels will be locally boosted to avoltage effective for inhibiting programming. A V_(SS) biased bit linewill discharge the locally boosted channel to V_(SS), thereby allowingprogramming of the selected memory cell to occur. A V_(DD) biased bitline will have no effect on the pre-charged NAND string, therebymaintaining a program inhibited state of the memory cells in the NANDstring.

FIG. 1 illustrates two NAND memory cell strings. As can be seen in FIG.1, an example NAND memory cell string (seen on the left) includes a bitline 102 and a selection of 32 serial-connected floating gate memorycells, the floating gate of each of the floating gate memory cells beingconnected to respective word lines, referenced as WL0, WL1, WL2, . . . ,WL30, WL31. An example floating gate memory cell, topmost among the 32serial-connected floating gate memory cells, is indicated by referencenumeral 104. The example NAND memory cell string also includes a stringselector transistor 106 having a drain connected to the bit line 102 anda source connected to the drain of the example floating gate memory cell104. The gate of the string selector transistor 106 is connected to astring selection line (SSL).

The example NAND memory cell string includes a ground select transistor108 with a drain connected to the source of the bottommost floating gatememory cell among the 32 serial-connected floating gate memory cells.The source of the ground select transistor 108 is connected to a localCommon Source Line (CSL). The gate of the ground select transistor 108is connected to a Ground Select Line (GSL).

Typically, NAND memory cell strings are assembled into blocks, where,for a given block, each NAND memory cell string shares the word lines,the Ground Select Line, the local Common Source Line and the StringSelection Line. Such blocks are then arranged in arrays of blocks.

It is known to control the CSL signal level from a main core controlblock of which there may be only one for an entire block array. In suchcases, the CSL signal is transmitted to all blocks in the array. Such aCSL may be called a Global Common Source Line (GCSL). U.S. Pat. No.6,914,813, “Segmented Non-Volatile Memory Block With Multiple SourcesHaving Improved Source Line Decode Circuitry” to Chavallier et al.(hereinafter “Chavallier”) discloses a global source line and localsource line. Chavallier discloses providing distinct source lines todistinct blocks.

FIG. 9 of Chavallier shows the local source line control and conceptualglobal and local source line structure for page program operation whenone of the word lines on a selected block is biased with V_(pgm) and theremaining word lines of the selected block are biased with V_(pass).However, Chavallier does not provide logic combinations adequate for usein a source-line programming scheme.

When a source-line programming scheme is used in NAND flash memories, aGCSL level is transmitted to all blocks in an array. Accordingly, when aGCSL level change operation occurs, for example, after a programoperation, the switching of the GCSL level from a high voltage to groundin every block in the array takes time and consumes power.

In one embodiment, each NAND flash cell block of a plurality of NANDflash cell blocks is associated with a local switch logic unit. Thelocal switch logic unit acts to gate the GCSL level to only transmit theGCSL level to the associated NAND flash cell block when the associatedNAND flash cell block is the selected NAND flash cell block. As shown inFIG. 8, a local switch logic unit 208 according to one embodimentincludes two transistors (802, 804) that are not normally present. Afteradding the proposed logic, the power consumption from the source-lineprogramming may be reduced.

According to one embodiment, there is provided a local switch logic unitfor reducing power consumption from source-line page programming in ablock of NAND flash memory strings, the NAND flash memory stringsconnected to a local common source line. The local switch logic unitincludes a first semiconductor switch for selectively allowing passageof a signal received on a global common source line to the block of NANDflash memory strings on the local common source line and a secondsemiconductor switch for selectively placing a predetermined voltage onthe local common source line.

According to another embodiment, there is provided a method of reducingpower consumption from source-line page programming in a block of NANDflash memory strings, the NAND flash memory strings connected to thelocal common source line. The method includes receiving an indication ofselection of the block of NAND flash memory strings and, responsive toreceiving the indication of selection, permitting passage of a signalreceived on a global common source line to the block of NAND flashmemory strings on the local common source line. The method furtherincludes receiving an enable indication and, responsive to receiving theenable indication, isolating the local common source line from apredetermined voltage.

According to a further embodiment, there is provided a method ofreducing power consumption from source-line page programming in a blockof NAND flash memory strings, the NAND flash memory strings connected tothe local common source line. The method includes receiving anindication that the block of NAND flash memory strings has not beenselected and, responsive to receiving the indication, isolating a globalcommon source line from the local common source line of the block ofNAND flash memory strings. The method further includes receiving adisable indication and, responsive to receiving the disable indication,connecting the local common source line to a predetermined voltage.

According to a still further embodiment, there is provided a memoryarray. The memory array includes a NAND flash cell block, the NAND flashcell block including a plurality of NAND flash memory strings, each NANDflash memory string of the plurality of NAND flash memory stringsconnected to a local common source line, and a local switch logic unit.The local switch logic unit includes a first semiconductor switch forselectively allowing passage, on the local common source line, of asignal to the plurality of NAND flash memory strings in the NAND flashcell block, wherein the signal is received on a global common sourceline and a second semiconductor switch for selectively placing apredetermined voltage on the local common source line.

Other aspects and features of the present invention will become apparentto those of ordinary skill in the art upon review of the followingdescription of specific embodiments of the invention in conjunction withthe accompanying figures.

FIG. 2 illustrates an example array 200 of NAND flash cell blocks 202.As will be clear to a person of ordinary skill in the art, the array 200is simplified for ease of illustration. Known arrays of NAND flash cellblocks consist of at least 2048 NAND flash cell blocks in a single arrayor plane structure. Each NAND flash cell block 202 is associated with,and receives input from, a local switch logic unit 208 and a combinationrow decoder and word line driver 210. Notably, each local switch logicunit 208 is communicatively connected to the corresponding row decoderand word line driver 210. The array 200 also includes a global switchlogic unit 204 which receives input from a source line power generator206 and is communicatively connected to each of the local switch logicunits 208. Additionally, a row pre-decoder 212 is communicativelyconnected to each of the combination row decoder and word line drivers210.

A closer look at an individual NAND flash cell block 202 is provided inFIG. 3. FIG. 3 allows identification of connections between the localswitch logic unit 208 and the NAND flash cell block 202. In particular,a local Common Source Line (CSL) and a Ground Select Line (GSL) connectthe local switch logic unit 208 to the NAND flash cell block 202.

The components of an example combination row decoder and word linedriver 210 are presented in FIG. 4. As illustrated in FIG. 4, thecombination row decoder and word line driver 210 includes a row decoder402 connected to a local charge pump 404, which, in turn, is connectedto a word line driver 406. The row decoder 402 is also connected to therow pre-decoder 212. The word line driver 406 is connected, by multipleword lines, to the associated NAND flash cell block 202. Additionally,the row decoder 402 and the local charge pump 404 maintain connectionsto the local switch logic unit 208.

As illustrated in FIG. 5A, the row decoder 402 includes an AND gate 502arranged to receive pre-decoded row information from the row pre-decoder212. The output of the AND gate 502 is received at the gate of a sensetransistor 504. In one embodiment, the sense transistor 504 is an n-typeMetal Oxide Semiconductor (NMOS) transistor. As is inherent in MOStransistors, the sense transistor 504 has a source and a drain. Thesource of the sense transistor 504 is connected to a source supplyvoltage. The drain of the sense transistor 504 is connected to thesource of an NMOS latch enable transistor 506. The gate of the latchenable transistor 506 receives a LCHBD signal from one of a set ofperipheral blocks (not shown). As can be seen upon review of the timingdiagram of FIG. 5B, the LCHBD signal is a pulse that prevents a wrongdecoding caused by glitches. The drain of the latch enable transistor506 is connected to one of two terminals of an address latch 510. Asillustrated, the address latch 510 is implemented as cross-coupledinverters. The other of the two terminals of the address latch 510 isconnected to the drain of an NMOS reset transistor 508. The gate of thereset transistor 508 receives a RST_BD signal from the same peripheralblock (not shown) from which the LCHBD signal is received. The RST_BDsignal is a pulse that is generated before starting a new decodingoperation. As can be seen upon review of the timing diagram of FIG. 5B,the RST_BD signal initializes “BDLCH_out” as a low state. The terminalof address latch 510 that connects to the drain of the NMOS resettransistor 508 may also be considered one of two outputs of the rowdecoder 402, “BDLCH_out”. While the other of the two outputs of the rowdecoder 402, “DIS_EN”, is taken from the drain of the latch enabletransistor 506.

In FIG. 6, the local charge pump 404 is illustrated as a high voltageswitching means to control transistors in the word line driver 406 andthe local switch logic unit 208. The local charge pump 404 typicallyconsists of an enhancement NMOS transistor 610, two depletion NMOStransistors 602, 606, a native NMOS transistor 608 and a 2-input NANDgate 604. The output signal, “BD_out” of the local charge pump 404 israised to V_(hv) 612 when the address latch 510 output, BDLCH_out, isV_(DD) and the OSC is oscillated (note: the local charge pump is a wellknown circuit). When the associated NAND flash cell block 202 isselected, BD_out=V_(hv) 612. When the associated NAND flash cell block202 is not selected, BD_out=V_(SS).

The BD_out signal is received by the word line driver 406, which isillustrated in detail in FIG. 7, and distributed to the gates of aplurality of NMOS transistors. Where there are 32 word lines, there are33 NMOS transistors in the word line driver 406: one NMOS transistorcorresponding to each wordline; and one string select NMOS transistor,TSS. For simplicity of illustration, only NMOS transistors TS0, TS1,TS2, . . . , TS27, TS28, TS29, TS30, TS31 corresponding to wordlines 0,1, 2, 27, 28, 29, 30 and 31 are shown in FIG. 7.

In addition to the word line driver 406, the local switch logic unit 208also provides input to the NAND flash cell block 202. Elements of thelocal switch logic unit 208 for use in the source-line page programmingscheme are illustrated in FIG. 8. The local switch logic unit 208includes a Ground Select Line (GSL) transistor 802. The GSL transistor802 is illustrated in FIG. 8 as an NMOS transistor whose source receivesa Ground Select (GS) signal from the row pre-decoder 212. Additionally,the unit 204. In common with the transistors of the word line driver406, the BD_out signal from the local charge pump 404 is the signal onthe gate of the GSL transistor 802 and on the gate of the CSL transistor804. The DIS_EN signal received at the local switch logic unit 208 fromthe row decoder 402 is connected to the gate of a discharging transistor806. The source of the discharging transistor 806 is grounded and thedrain of the discharging transistor 806 is connected to the drain of theCSL transistor 804.

FIG. 9 illustrates elements of the NAND flash cell block 202. As isknown, the NAND flash cell block 202 includes a plurality of NAND memorycell strings. An example NAND memory cell string is indicated in FIG. 9by reference numeral 900. The example NAND memory cell string 900includes a bit line 902 and 32 serial-connected floating gate memorycells, the floating gate of each of the floating gate memory cells beingconnected to respective word lines, referenced as WL0, WL1, WL2, . . . ,WL30, WL31. An example floating gate memory cell, topmost among the 32serial-connected floating gate memory cells, is indicated in FIG. 9 byreference numeral 931. The example NAND memory cell string 900 alsoincludes a string selector transistor 904 having a drain connected tothe bit line 902 and a source connected to the drain of the examplefloating gate memory cell 931. The gate of the string selectortransistor 904 is connected to the string selection line (SSL) receivedfrom the word line driver 406.

The example NAND memory cell string 900 includes a ground selecttransistor 906 with a drain connected to the source of the bottommostfloating gate memory cell among the 32 serial-connected floating gatememory cells. The source of the ground select transistor 906 isconnected to the CSL received from the local switch logic unit 208. Thegate of the ground select transistor 906 is connected to the GSLreceived from the row pre-decoder 212.

The example NAND memory cell string 900 connects to a 2-dimensionalshared page buffer 910-0 through an odd bit select line (BSLo)transistor 908. The example NAND memory cell string 900 is paired with afurther NAND memory cell string, which connects to the 2D shared pagebuffer 910-0 through an even bit select line (BSLe) transistor 912. Eventhough the bit lines are placed in column direction, logically a flashmemory cell is selected, in part, by row address. For the example ofFIG. 9, where NAND memory cell strings are paired and associated with 2Dshared page buffers 910, physically, word lines are 32 but, logically,there are 64 word lines. When the row address of a memory cell ofinterest is odd, a high BSLo value is applied at the gate of the odd bitselect line transistor 908, thereby selecting the example NAND memorycell string 900, which is associated with the odd 0^(th) bit line“B/L0o”. When read operation is issued, a low BSLe value is applied tothe gate of the even bit select line transistor 912, thereby unselectingthe NAND memory cell string that is associated with the even 0^(th) bitline, “B/L0e”.

Other paired NAND memory cell strings are associated with: an even32767^(th) bit line, “B/L32767e”, an odd 32767^(th) bit line,“B/L32767e”, and a 32767^(th) 2D shared page buffer 910-32767; and aneven 34511^(th) bit line, “B/L34511e”, an odd 34511^(th) bit line,“B/L34511o”, and a 34511^(th) 2D shared page buffer 910-34511.

In overview, in the array 200 of FIG. 2, only a selected NAND flash cellblock 202 receives a value on the CSL that is indicative of the value onthe GCSL. The CSLs of non-selected NAND flash cell blocks are disabledthrough connection to ground.

In operation, power for the global switch logic unit 204 is receivedfrom the source line power generator 206. The global switch logic unit204 outputs a voltage level on the GCSL. The signal on the GCSL isreceived by each of the local switch logic units 208. A NAND flash cellblock 202 is selected based on the output of the row pre-decoder 212.

The row decoder and word line driver 210 associated with the selectedNAND flash cell block 202 generates a V_(pgm) level as BD_out.Responsive to the V_(pgm) level on BD_out, the local switch logic unit208 associated with the selected NAND flash cell block 202 passes, onthe CLS, the signal that has been received on the global common sourceline.

The combination row decoder and word line driver 210 associated witheach of the selected NAND flash cell blocks 202 generates a V_(DD) levelon DIS_EN. Responsive to the V_(DD) level on DIS_EN, the local switchlogic unit 208 associated with the selected NAND flash cell block 202biases the discharging transistor 806 such that the CLS is at ground.

FIG. 10 illustrates a timing diagram for the row decoder 402 and thelocal switch logic unit 208 corresponding to a scenario wherein the NANDflash cell block 202 of FIG. 3 is the selected NAND flash cell block.The structure may be termed “hierarchical” because, at given times, oneNAND flash cell block 102 is promoted above the remaining NAND flashcell blocks.

A Program Setup phase is identified in FIG. 10 as t1001. In the ProgramSetup phase t1001, the block decoder 402 is reset through theapplication of a pulse on the RST_BD line. The level of the BDLCH_outoutput of the address latch 510 in the block decoder 402 goes to 0V. Thelatch enable signal LCHBD of the block decoder 402 is pulsed once rowpre-decoded signals Xp/Xq/Xr/Xt are valid. The BDLCH_out of the addresslatch 510 rises to V_(DD) when row pre-decoded signals Xp/Xq/Xr/Xt arematched. In the local charge pump 404, V_(hv) is set to V_(pgm) duringentire program period (t1 to t7) covered by FIG. 10. Responsive to thepulse on the RST_BD line, the BD_out associated with each of theunselected NAND flash cell blocks 202 reduces to 0V. As a result, allwordlines WL0, WL1, WL2, . . . , WL30, WL31, the SSL, the GSL and theCSL in unselected blocks are floated.

In a NAND String Precharge phase, identified in FIG. 10 as t1002, thelocal switch logic unit 208 receives an indication of selection of thecorresponding NAND flash cell block 202. That is, the output signalBD_out of the row decoder and word line driver 210 is raised to V_(pgm)(=18V) in the local charge pump 404. Responsive to the application ofthe V_(pgm) level BD_out to the gate of the CSL transistor 804, the CSLtransistor 804 permits passage of a signal received on the GCSL to theselected NAND flash cell block 202 on the CSL, accordingly, the CSLrises to V4 (=10V). At the same time as the signal on BD_out is raisedto V_(pgm), the signal on DIS_EN from the drain of the latch enabletransistor 506 of the row decoder 402 is reduced to ground, therebyturning off the discharging transistor 806 and isolating the CSL fromground. The ground on DIS_EN may be considered an enable indication.

For NAND flash cell blocks 202 that are not selected, BD_out remains atground and a local switch logic unit 208 associated with an unselectedNAND flash cell block 202 may consider that the ground on BD_out is anindication that the associated NAND flash cell block 202 has not beenselected. Owing to the ground BD_out signal on the gate of the CSLtransistor 804, the CSL transistor 804 remains off and the GCSL isisolated from the CSL of the associated NAND flash cell block 202. Atthe same time as the signal on BD_out is reduced to ground, the signalon DIS_EN from the drain of the latch enable transistor 506 of the rowdecoder 402 is increased, thereby turning on the discharging transistor806 and connecting the CSL to ground. The high voltage level on DIS_ENmay be considered a disable indication.

The change in BD_out turns on all of the transistors TSS, TS0 to TS31 ofthe word line driver 406 as well as the GSL transistor 802 and the CSLtransistor 804. All S signals except Si+1 rise to V2 (V_(pass)=10V)while Si+1 rises to V3 (V_(dcp)=4V) and the signal on the GSL rises toV5 (V_(gsl)=10V). By the end of the NAND String Precharge phase t1002, aselected NAND memory cell string may be considered to be precharged. Thelevel on the CSL output from the local switch logic unit 208 associatedwith the selected NAND flash cell block 202 follows the level of GCSL.

In a Boosting phase, identified in FIG. 10 as t1003, the Si−1 returns to0V, the signal on the GSL returns to 0V, the selected Si rises to V1(V_(pgm)=18V) and the channel of the selected floating gate memory cellin the NAND memory cell string is locally boosted from the prechargedlevel.

In a Bit Line Data Load phase, identified in FIG. 10 as t1004, the SSrises to V_(CC) to load the bit line voltage to the selected NANDstring. If the program data is 1, the bit line voltage is V_(CC), whichmaintains precharged and boosted channel voltage in the selectedfloating gate memory cell. If the program data is 0, the bit linevoltage is 0V, which discharges the precharged and boosted channelvoltage in the selected floating gate memory cell.

Notably, a Program phase, identified in FIG. 10 as t1005, has a longerduration than the other phases identified in FIG. 10. During the Programphase t1005, all signal levels are maintained.

In first portion of a Program Recovery phase, identified in FIG. 10 ast1006, the Si corresponding to the selected wordline may be dischargedto 0V to avoid accidental programming during program recovery. In secondportion of the Program Recovery phase, identified in FIG. 10 as t1007,all of the remaining signals in the core, including the signal on theCSL, are discharged.

As will be clear to a person of ordinary skill in the art, the CSLtransistor 804 and the discharging transistor 806 need not necessarilybe NMOS transistors and, according to the fabrication methods used inthe related array, may be selected from among many types ofsemiconductor switches.

Therefore, the hierarchical common source line structure bias controldescribed herein may provide two major benefits. One benefit may be areduced power consumption. Another benefit may be fast discharge ofsource line programming level (GCSL) to ground because the CSLassociated with the selected NAND flash cell block 202 has a highvoltage level while the CSLs associated with remaining NAND flash cellblocks 202 have a ground level by the placement and activation of thedischarging transistor 806. As will be clear to a person of ordinaryskill in the art, the GCSL “sees” a significantly reduced capacitiveload in the structure described above than in the structure in which theGCLS is provided to all NAND flash memory blocks.

The above-described embodiments of the present application are intendedto be examples only. Alterations, modifications and variations may beeffected to the particular embodiments by those skilled in the artwithout departing from the scope of the application, which is defined bythe claims appended hereto.

1. A NAND Flash memory device comprising: a NAND Flash cell blockincluding a plurality NAND flash memory strings connected to a localcommon source line, and a local switch logic including: a firstsemiconductor switch for selectively allowing passage of a signalreceived on a global common source line to the cell block on the localcommon source line; and a second semiconductor switch for selectivelyplacing a predetermined voltage on the local common source line.
 2. Thememory device as claimed in claim 1 wherein the predetermined voltage isground.
 3. The memory device as claimed in claim 1 wherein the localswitch logic further comprises a first input line for receiving a globalcommon source line signal.
 4. The memory device as claimed in claim 1wherein the local switch logic further comprises a second input line forreceiving a voltage level indicative of the NAND Flash cell block nothaving been selected.
 5. The memory device as claimed in claim 1 whereinthe local switch logic further comprises a third input line forreceiving a ground select signal.
 6. The memory device as claimed inclaim 5 wherein the local switch logic further comprises a thirdsemiconductor switch for selectively allowing a passage of the groundselect signal to a ground select line in the NAND Flash cell block. 7.The memory device as claimed in claim 6 wherein the plurality of NANDflash memory strings is connected to the ground select line.
 8. Thememory device as claimed in claim 5 further comprising a row decoderadapted to receive row pre-decoded signals and based on the rowpre-decoded signals, provide, on the third input line, the ground selectsignal.
 9. The memory device as claimed in claim 1 wherein the localswitch logic further comprises a fourth input line for receiving a blockdecode signal from a local charge pump.
 10. The memory array of claim 9wherein the local charge pump is adapted to receive a block decode latchsignal and provide the block decode signal to the first and the thirdsemiconductor switches.
 11. The memory array of claim 10 wherein thepassage of the ground select signal is based on the block decode signalon the fourth input line.
 12. A method of source-line page programmingin a NAND Flash memory device, the method comprising: receiving anindication of selection of a block of NAND flash memory strings;responsive to receiving the indication of selection, permitting passageof a signal received on a global common source line to the block of NANDflash memory strings on a local common source line; receiving an enableindication; and responsive to receiving the enable indication, isolatingthe local common source line from a predetermined voltage.
 13. Themethod of claim 11 wherein the predetermined voltage is ground.
 14. Amethod of source-line page programming in a NAND Flash memory device,the method comprising: receiving an indication that the block of NANDflash memory strings has not been selected; responsive to receiving theindication, isolating a global common source line from a local commonsource line of the block of NAND flash memory strings; receiving adisable indication; and responsive to receiving the disable indication,connecting the local common source line to a predetermined voltage. 15.The method of claim 14 wherein the predetermined voltage is ground.